北京汇德信科技有限公司

纳米压印模板及光栅点阵制作

概   述标准模板一标准模板二2x2cm2模板四英寸模板 六英寸模板

概述


在科研中,很多用户需要用到光栅或点阵这些周期性的结构。有时用户不需要研究微纳米加工工艺,这样如果能花费低廉的价格买到这些成品将十分方便,只要接着从事后续的工作就可以了;有的用户自已拥有微纳米加工设备及经验,但纳米量级的尺寸要采用电子束曝光 可制备百纳米周期结构的紫外曝光、白光干涉等方法来进行加工,比如采用电子束曝光加工纳米级结构,若有效面积超过1平方厘米,占机时间会很长,并需要调整电子束光刻及干法刻蚀工艺来优化成品。


鉴于此,我们向用户提供光栅及点阵的纳米结构成品。衬底材料为硅单晶,可广泛应用于各类科学研究。







标准模板一


我们可提供纳米级微结构,衬底材料为硅单晶,广泛应用于科学研究。批量生产,质量有保证,且性价比高。


产品精度:


  • 线宽/深度:±15%
  • 周期精度:优于0.5%
  • 衬底宽度和高度误差:± 0.2 mm
  • 衬底厚度:0.675 ± 0.050 mm


具体规格如下表所示:


光栅纳米结构模板 (线条+间距) Linear Nanostamps (line+space)


序号 周期
沟槽深度
占空比
线宽
样片尺寸
1
139 nm
50 nm
50%
69.5 nm
12.5×12.5×0.7 mm
2
139 nm
50 nm
50%
69.5 nm
25×25×0.7 mm
3
278 nm④
110 nm
50%
139 nm
12.5×12.5×0.7 mm
4
416.6 nm
110 nm
50%
208 nm
12.5×12.5×0.7 mm
5
500 nm
multiple
44%
220 nm
8×8.3×0.7 mm
6
500 nm
multiple
60%
300 nm
8×8.3×0.7 mm
7
555.5 nm
110 nm
50%
278 nm
20×9×0.7 mm
8
555.5 nm
140 nm
50%
278 nm
20×9×0.7 mm
9
555.5 nm
110 nm
29%
158 nm
20×9×0.7 mm
10
555.5 nm
140 nm
29%
158 nm
20×9×0.7 mm
11
600 nm
multiple
43%
260 nm
8×8.3×0.7 mm
12
600 nm
multiple
55%
330 nm
8×8.3×0.7 mm
13
606 nm
190 nm
50%
303 nm
29×12×0.7 mm
14
606 nm④
190 nm
50%
303 nm
29×12×0.7 mm
15
606 nm
190 nm
50%
303 nm
29×24.2×0.7 mm
16
675 nm
170 nm
32%
218 nm
24×10×0.7 mm
17
675 nm
170 nm
32%
218 nm
24×30.4×0.7 mm
18
700 nm
multiple
47%
330 nm
8×8.3×0.7 mm
19
700 nm
multiple
55%
375 nm
8×8.3×0.7 mm
20
833.3 nm
200 nm
50%
416 nm
12.5×12.5×0.7 mm
21
833.3 nm
200 nm
50%
416 nm
25×25×0.7 mm


占空比表示线宽和周期的比率。

第二个尺寸相当于沟槽的长度。

④scientific" grade offered at a discount. It has at least 80% of usable area. Up to 80/100 scratch/dig/particles and irregular substrate shape may present.

可定做更大尺寸

深度可做成150, 250 和 350 nm。


二维纳米模板(矩形或六边形)2D nanostamps (rectangular and hexagonal lattice)


序号
周期
晶格类型
沟槽深度
特征宽度
衬底尺寸
1
600 nm
rect post
multiple
195 nm
8×8.3×0.7mm
2
600 nm
rect post
multiple
275 nm
8×8.3×0.7mm
3
700 nm
rect post
multiple
260 nm
8×8.3×0.7mm
4
700 nm
rect post
multiple
350 nm
8×8.3×0.7mm
5
600 nm
hex post
multiple
165 nm
8×8.3×0.7mm
6
600 nm
hex post
multiple
240 nm
8×8.3×0.7mm
7
700 nm
hex post
multiple
220 nm
8×8.3×0.7mm
8
700 nm
hex post
multiple
290 nm
8×8.3×0.7mm
9
600 nm
hex hole
multiple
180 nm
8×8.3×0.7mm
10
700 nm
hex hole
multiple
200 nm
8×8.3×0.7mm
11
700 nm
hex hole
multiple
290 nm
8×8.3×0.7mm


深度可做成150, 250 和 350 nm


Line grating: hex post:
rect post: hex hole:


下载:标准模板一详细资料.pdf


标准模板二


我们可提供纳米级微结构,衬底材料为硅单晶,广泛应用于科学研究。批量生产,质量有保证,且性价比高。


产品精度:

  • 直径±10%
  • 线宽±10%
  • 高度/深度±15%

产品说明:

  • 硅片厚度:0.5mm(特殊情况另标注)
  • 模板尺寸:产品规格+/-0.2mm
  • 缺陷面积:<1%


具体规格如下表所示:


光栅结构(周期,线宽,高度,有效面积,衬底尺寸)


Part No Description Image
Pattern 9

Line grating

Period: 70 nm

Width: 25nm

Height: 32 nm

Area: 21x 0.5 x 1.2 mm2

Substrate: Si 10 x 10 mm2

Pattern 34

Line grating

Period: 120, 150, 200 nm

Width: 60, 75, 100 nm

Height: 115 nm

Area: 2 x 2 mm2 each

Substrate: Si 20 x 20 mm2

Pattern 35

Line arry

Period: 150 nm

Width: 75 nm

Height: 116 nm

Area: 15 x 15 mm2

Substrate: Si 15 x 15 mm2

Pattern 2

Line grating

Period: 300 nm

Width: 170 nm

Height: 210 nm

Area: 30 x 30 mm2

Substrate: Si 30 x 30 mm2

Pattern 38

Line grating

Period: 410 nm

Width: 170 nm

Height: 110 nm

Area: 10 x 12 mm2

Substrate: Si 4"

Pattern 28

Line grating

Period: 550 nm

Width: 288 nm

Height: 300 nm

Area: 20 x 20 mm2

Pattern 27

Line grating

Period: 4000 nm

Width: 2000 nm

Height: 2000 nm or 2300 nm

Area: 32 x 32 mm2

Substrate: Si 32 x 32 mm2


V型光栅结构


Part No

Product

Period

Groove width

Depth

Area

Image

4

P1300L_v_25w25

1300nm

1100nm

800nm


25 X 25 mm2
(Si substrate)



柱状点阵模板(周期,柱直径,高度,有效面积,衬底尺寸)


Part No Description Image
Pattern 6

High-resolution pillar array

Period: 35 nmand 42 nm

Diameter: 15 - 20 nm

Height: 25nm

Area: each period >25x25 um2

Substrate: Si 12.5 x 12.5 mm2

Pattern 12

Nanopillar & line/space array

Period: 100 nm

Diameter/Width: 50 nm

Height: 40 nm

Area: 0.2 x 0.2 mm2 each

Substrate: 20 x 20 mm2

Pattern 31

Square pillar array

Period: 150 nm

Diameter:  62 nm

Height:  135 nm

Area:  20 x 20 mm2

Substrate:  Si 20 x 20 mm2

Pattern 1

Square pillar array

Period: 300 nm

Diameter: 145 nm

Height: 170 nm

Area: 14 x 14 mm2

Substrate: Si 14 x 14 mm2

Pattern 25

Square pillar array

Period: 400 nm

Diameter: 190 nm

Height: 130 nm or 280 nm

Area: 15 x 15 mm2

Substrate:  Si 15 x 15 mm2

Pattern 29

Square pillar array

Period:  550 nm

Diameter: 300 nm

Height: 150 or 300 nm

Area:  20 x 20 mm2

Substrate:  Si 20 x 20 mm2

Pattern 3

Hexagonal pillar array

Period:  600 nm

Diameter: 300 nm

Height: 310 nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 15

Hexagonal pillar array

Period: 750 nm

Diameter: 325 nm

Height:  260 nm

Area: 25 x 25 mm2

Substrate: Si 25 x 25 mm2

Pattern 7

Hexagonal pillar array

Period: 1000 nm

Diameter: 400 nm

Height: 280 nm

Area: 20 x 20 mm2

Substrate: Si 26 x 26 mm2

Pattern 17

Hexagonal pillar array

Period: 1010 nm

Diameter: 470 nm

Height: 750 nm

Area: 25 x 25 mm2

Substrate: Si (0.7mm) 25 x 25 mm2

Pattern 42

Hexagonal high AR pillar array

Period:        1010 nm

Diameter:       400 nm

Height:        1600 nm

Area:        25 x 25 mm2

Substrate:  Si 25 x 25 mm2
Pattern 26

Hexagonal pillar array

Period: 1732 nm

Diameter: 880 nm

Height: 590 nm

Area:  20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 37

Hexagonal pillar array

Period:             3000 nm

Diameter:         1400 nm

Height:             5000 nm

Area:                20 x 20 mm2

Substrate:        Si 20 x 20 mm2
Pattern 20

Hexagonal pillar array

Period: 3000 nm

Diameter: 1800 nm

Height: 1200 nm

Area: 20 x 20 mm2

Substrate: Si 25 x 25 mm2

Pattern 39

Hexagonal tapered pillar array

Period:         600 nm

Diameter:     top 80 nm, bot 260 nm

Height:         160 nm

Area:         20 x 20 mm2

Substrate:    Quartz 20 x 20 mm2
Pattern 40

Square tapered pillar array

Period:         250 nm

Diameter:       130 nm

Height:         300 nm

Area:           14 x 14 mm2

Substrate:       Si 14 x 14 mm2
Pattern 41

Square tapered pillar array

Period:         250 nm

Diameter:       136 nm

Height:         150 nm

Area:          14 x 14 mm2

Substrate:      Si 14 x 14 mm2


孔阵模板(周期,孔直径,高度,有效面积,衬底尺寸)


Part No Description Image
Pattern 11

Square hole array

Period: 90 nm

Diameter: 45 nm

Height: 50 nm

Area: 4x 0.6 x 0.6 mm2

Chip size: 15 x 15 mm2

Pattern 24

Square hole array

Period: 350 nm

Diameter: 225 nm

Height: 300 nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 30

Hexagonal hole array

Period: 345 nm

Diameter: 227 nm

Height: 200 nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 32

Hexagonal hole array

Period:  500 , 1000 , 2000 nm

Diameter: 50, 100, 200 nm

Height: 110 nm

Area: 0.2 x 0.2 mm2 each (9x)

Substrate: Si 24 x 24 mm2

Pattern 4

Hexagonal hole array

Period: 600 nm

Diameter: 300 nm

Height: 50 nm, 450 nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 5

Hexagonal hole array

Period: 600 nm

Diameter: 400 nm

Height: 680 nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 14

Hole array on Rhombic lattice

Period:* x=610nm, y=425nm

Diameter: 150 nm

Height: 300 nm

Area: 20 x 20 mm2

Chip size: Si 24 x 24 mm2

* center-to-center distance in x and y

Pattern 16

Hexagonal hole array

Period: 750 nm

Diameter: 380 nm

Height: 420 nm

Area: 25 x 25 mm2

Substrate: Si 25 x 25 mm2

Pattern 36

Hexagonal hole array

Period:  1010 nm

Diameter: 300 or 340 or 390 nm

Height: 300 nm

Area: 15 x 15 mm2

Substrate: Si 15 x15 mm2

Pattern 18a

Hexagonal hole array

Period: 1010 nm

Diameter: 490 nm

Height: 300 nm

Area: 25 x 25 mm2

Substrate: Si (0.5mm) 25 x 25 mm2

Pattern 18b

Hexagonal hole array

Period: 1010 nm

Diameter:     350 nm

Height:          470 nm

Area:            25 x 25 mm2

Substrate:   Si (0.5mm) 25 x 25 mm2

Pattern 19

Hexagonal hole array

Period: 1500 nm

Diameter: 780 nm

Height: 550 nm

Area: 25 x 25 mm2

Substrate: Si (1mm) 25 x 25 mm2

Pattern 21

Hexagonal hole array

Period: 3000 nm

Diameter: 1500 nm

Height: 850 nm

Area: 20 x 20 mm2

Substrate: Si 25 x 25 mm2

Pattern 22

Hexagonal hole array

Period: 3000 nm

Diameter: 1200 nm

Height: 1500 nm

Area: 20 x 20 mm2

Substrate: Si 25 x 25 mm2


下载:标准模板二详细资料.pdf


2x2cm2标准纳米压印模板


我们提供电子束光刻方法制备的硅模板,衬底尺寸为20x20mm2。图形分辨率高,有效区域为5x5mm2。批量生产,质量有保证,且性价比高。

产品精度:


  • 标准高度:100nm
  • 直径: ±10%
  • 线宽: ±10%
  • 缺陷面积:< 1%


具体规格如下表所示:


孔阵(矩形孔阵)


序号 Product Period Area Diameter / Height
1 P100s_h_5w5 100nm 5x5mm2 50nm/ 100nm
2 P150s_h_5w5 150nm 5x5mm2 60nm/ 100nm
3 P200s_h_5w5 200nm 5x5mm2 70nm/ 100nm


孔阵(六边形孔阵)


序号 Product Period Area Diameter / Height
1 P200h_h_5w5 200nm 5x5mm2 80nm/ 100nm
2 P300h_h_5w5 300nm 5x5mm2 125nm/ 100nm
3 P400h_h_5w5 400nm 5x5mm2 150nm/ 100nm


柱状点阵(矩形柱状点阵)


序号 Product Period Area Diameter / Height
1 P100s_p_5w5 100nm 5x5mm2 50nm/ 100nm
2 P150s_p_5w5 150nm 5x5mm2 60nm/ 100nm
3 P200s_p_5w5 200nm 5x5mm2 80nm/ 100nm


柱状点阵(六边形柱状点阵)


序号 Product Period Area Diameter / Height
1 P200h_p_5w5 200nm 5x5mm2 70nm/ 100nm
2 P300h_p_5w5 300nm 5x5mm2 110nm/ 100nm
3 P400h_p_5w5 400nm 5x5mm2 120nm/ 100nm


大面积四英寸模板


我们提供四英寸硅或石英模板,可用于压印工艺。批量生产制作,质量有保证且性价比高。


产品精度:


  • 高度/深度:±15%
  • 直径:±10%
  • 线宽:±10%
  • 缺陷面积:<1%


具体规格如下表所示:


Holes on Hexagonal Lattice(六边形孔阵)


Part No

Product

Diameter

Period

Area

Max. Etch depth (Si/Quartz)

Image

1

P350h_h_100d

180nm

350 nm

2-inch

200 nm/100 nm

2

P450h_h_50d

220nm

450 nm

2-inch

350 nm/150 nm

3

P520h_h_20w20

260nm

520 nm

20x20 mm2

450 nm/200 nm

4

P600h_h_46w46

300nm

600 nm

46x46 mm2

450 nm/200 nm

5

P600h_h_100d

300nm

600 nm

4-inch

450 nm/200 nm

6

P750h_h_51w51

350nm

750 nm

51x51 mm2

450 nm/200 nm

7

P780h_h_20w20

350nm

780 nm

20x20 mm2

450 nm/ 200 nm

8

P780h_h_50d

350nm

780 nm

2-inch

450 nm/200 nm

9

P1000h_h_20w20

400nm

1000 nm

20x20 mm2

600 nm/300 nm

10

P1000h_h_51w51

300nm~
500nm

1000 nm

51x51 mm2

600 nm/300 nm

11

P1000_h_100d
NEW!

300nm~
500nm

1000 nm

φ94 mm

600 nm/300 nm

12

P1500h_h_20w20

400nm~
650nm

1500 nm

20x20 mm2

600 nm/300 nm

13

P1500h_h_51w51

400nm~
650nm

1500 nm

51x51 mm2

600 nm/300 nm

14

P1700h_h_100d

500nm~
800nm

1700 nm

4-inch


15

P2000h_h_100d

600 nm~
1100 nm

2000 nm

φ94 mm

800nm/400nm

16

P3000h_h_100d

600 nm~
1400 nm

3000 nm

φ94 mm

1000 nm/400 nm

17

P3500h_h_100d

600nm~
1600nm

3500 nm

φ94 mm

1200 nm/500 nm

18

P5200h_h_100d

600 nm~
2000 nm

5200 nm

φ94 mm

1200 nm/500 nm


Holes on Square Lattice(矩形孔阵)


Part No

Product

Diameter

Period

Area

Max. Etch depth (Si/Quartz)

Image

1

P350s_h_20w20

250nm

350 nm

20x20 mm2

300 nm/50 nm

2

P350s_h_100d

250nm

350 nm

4-inch

300 nm/150 nm


Pillars on Hexagonal Lattice(六边形柱状点阵)


Part No

Product

Diameter

Period

Area

Max. Etch depth (Si/Quartz)

Image

1

P450h_p_50d

220nm

450 nm

φ50mm

350 nm/150 nm

2

P600h_p_46w46

300nm

600 nm

46x46 mm2

450 nm/200 nm

3

P600h_p_100d

300nm

600 nm

φ94 mm

450 nm/200 nm

4

P750h_p_51w51

350nm

750 nm

51x51 mm2

450 nm/200 nm

5

P780h_p_20w20

350nm

780 nm

20x20 mm2

450 nm/200 nm

6

P780h_p_50d

350nm

780 nm

φ50mm

450 nm/200 nm

7

P1000h_p_20w20

400nm

1000 nm

20x20 mm2

600 nm/300 nm

8

P1000h_p_51w51

300nm~
500nm

1000 nm

51x51 mm2

600 nm/300 nm

9

P1000h_p_100d
NEW!

300nm~
500nm

1000 nm

φ94 mm

600 nm/300 nm

10

P1500h_p_20w20

400nm~
650nm

1500 nm

20x20 mm2

600 nm/300 nm

11

P1500h_p_51w51

400nm~
650nm

1500 nm

51x51 mm2

600 nm/300 nm

12

P1700h_p_100d

500nm~
800nm

1700 nm

φ94mm


13

P2000h_p_100d

600nm~
1100nm

2000 nm

φ94mm

800 nm/400 nm

14

P3000h_p_100d

600nm~
1400nm

3000 nm

φ94 mm

1000 nm/400 nm

15

P3500h_p_100d

600nm~
1600nm

3500 nm

φ94 mm

1200 nm/500 nm

16

P5200h_p_100d
NEW!

600nm~
2000nm

5200 nm

φ94 mm

1200 nm/500 nm


Pillars on Square Lattice(矩形柱状点阵)


Part No

Product

Diameter

Period

Area

Max. Etch depth (Si/Quartz)

Image

1

P140s_p_80d

65nm

140 nm

φ80mm

75 nm/ —

2

P150s_p_30w30

75nm

150nm

30x30mm2

75 nm/ —

3

P200s_p_75d

90nm

200 nm

φ90mm

200 nm/ —

4

P250s_p_30w30

110nm

250 nm

30x30 mm2

200 nm/100 nm

5

P300s_p_30w30

130nm

300 nm

30x30 mm2

200 nm/100 nm

6

P300s_p_100d

130nm

300 nm

φ94mm

200 nm/100 nm

7

P400s_p_30w30

200nm

400nm

30x30 mm3

300 nm/100 nm

8

P400s_p_100d

200nm

400nm

φ94mm

300 nm/100 nm

9

P500s_p_30w30

250nm

500 nm

30x30 mm2

300 nm/100 nm

10

P600s_p_100d

600nm

600 nm

φ94mm

500 nm/250 nm

11

P800s_p_100d

400nm

800 nm

φ94mm

500 nm/200 nm


Linear Gratings(光栅结构)


Part No

Product

Width

Period

Area

Max. Etch depth (Si/Quartz)

Image

1

P125L-80d

55nm

125nm

φ80mm

100 nm/—

2

P140L_ 80d

65nm

140nm

φ80mm

100 nm/—

3

P150L_ 30w30

70nm

150nm

30x30mm2

75 nm/—

4

P200L_ 90d

90nm

200nm

φ90mm

150 nm/—

5

P250L_30w30

110nm

250nm

30x30 mm2

200 nm/100 nm

6

P300L_30w30

130nm

300nm

30x30 mm2

300 nm/100 nm

7

P300L_100d

130nm

300nm

φ94mm

300 nm/100 nm

8

P400L_30w30

200nm

400nm

30x30 mm2

300 nm/150 nm

9

P400L_100d

200nm

400nm

φ94mm

300 nm/150 nm

10

P500L_30w30

250nm

500nm

30x30 mm2

400 nm/200 nm

11

P600L_100d

300nm

600nm

φ94mm

500 nm/250 nm

12

P800L_100d

400nm

800nm

φ94mm

600 nm/300 nm

13

P1000L_100d

500nm

1000nm

φ94mm

800 nm/400 nm

14

P1300L_75w55

650nm

1300nm

75x55 mm2

1000 nm/500 nm


Multi-pattern(复合结构)


Part No

Product

Description

Diameter

Period

Area

Max. Etch depth (Si/Quartz)

1

MHSL400-800

Linear, hexagonal, square array combination,Periods: 400-800nm

pitch dependent

holes/
lines

9 x each period,7.5mm x 7.5mm

400 nm /150 nm

2

MP250L300

Multi-period linear grating combination 1, Periods: 250nm, 275nm, 300nm

Linewidth(+/15nm):
90/250
100/275
120/300

lines

3 x each period,7mm x 7mm

200 nm/100 nm

3

MP300L600

Multi-period linear grating combination 2,Periods: 300nm, 400nm, 500nm, 600nm

Linewidth (+/- 10%):
135/300
175/400
250/500
300/600

lines

4 x each period,10mm x 10mm

300 nm/150 nm

4

MP800L1500

Multi-period linear grating combination 3,Periods: 800nm, 1000nm, 1200nm, 1500nm

Linewidth (+/- 10%):
400/800
500/1000
600/1200
700/1500

lines

4 x each period,20mm x 20mm

1000 nm/500 nm

5

MP500L2050

Multi-period linear grating combination 3,Periods: 550nm, 600nm, 650nm……1950nm, 2000nm, 2050nm

 

lines

32 x 12mm x 12mm

600nm/300nm


如下是复合结构示意图:


MHSL400-800 MP250L300 MP300L600


六英寸模板


我们可提供纳米级微结构,衬底材料为硅单晶及少量其它衬底,广泛应用于科学研究。批量生产,质量有保证,且性价比高。


具体规格如下表所示:


序号 周期(nm) 类型 刻蚀深度(nm) 衬底尺寸(mm) 衬底材料
1 250 line/space Φ 150 Si
2 250 line/space 300 Si
3 275 line/space 80 Φ 150 Si
4 275 line/space Φ 150 Si
5 400 line/space Φ 150 Si
6 435 line/space 135 Φ 150 Si
7 450 line/space Φ 150 Si
8 450 line/space 450 Φ 150 Si
9 458.5 line/space 125 Φ 150 Si
10 458.5 line/space Φ 150 Si
11 500 line/space Φ 150 Si
12 500 line/space 100 Φ 150 Si
13 800 line/space Φ 150 Si
14 2500 line/space Φ 150 Si
15 2500 line/space 1000 Φ 150 Si
16 325 2d pillar Φ 150 Si
17 325 2d pillar 100 Φ 150 Si
18 400 2d pillar Φ 150 Si
19 400 2d pillar 110 Φ 150 Si
20 450 2d pillar Φ 150 Si
21 450 2d pillar 150 Φ 150 Si
22 500 2d pillar Φ 150 Si
23 500 2d pillar 100 Φ 150 Si
24 500 2d pillar 200 Φ 150 Si
25 800 2d pillar Φ 150 Si
26 1000 2d pillar Φ 150 Si
27 1000 2d pillar 400 Φ 150 Si
28 1200 2d pillar Φ 150 Si
29 2000 2d pillar Φ 150 Si
30 2000 2d pillar 133 Φ 150 Si
31 400 2d pillar 140 Φ 150 Si
32 400 2d pillar 100 SiO2 Φ 150 Si +100nm SiO2
33 500 2d pillar Φ 150 Si
34 500 2d pillar 110 Φ 150 Si
35 500 2d pillar 200 Φ 150 Si
36 600 2d pillar Φ 150 Si
37 657 2d pillar Φ 150 Si
38 657 2d pillar 300 Φ 150 Si
39 800 2d pillar Φ 150 Si
40 1000 2d pillar Φ 150 Si
41 1000 2d pillar 160 Φ 150 Si
42 400 2d pillar Φ 150 fused silica
43 500 2d conical pillar Φ 150 Si
44 800 hex 460 Φ 150 Si
45 200 hex hole 460 Φ 150 Si
46 470 hex pillar 125 Φ 150 Si
47 800 hex pillar Φ 150 Si
48 1800 hex pillar 475 Φ 150 Si


说明:


①:尚未刻蚀



Line / space

2d pillar

2d hole

hex hole

hex pillar




 

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