16. 紫外光刻胶能达到怎样的分辨率和对比度？

16. Which resolution and which contrast can be obtained with photoresists?

The resolution of resists is influenced by several parameter such as e.g. the type of mask liner used, most of the respective NA (numerical aperture), film thickness, exposure wavelength, concentration of
developer and time of development, substrate (e.g. reflexion properties), and a few other parameters with minor influence on the result. The following table lists approximate values as determined in own tests under standard assay conditions or the best results of our users with a particular resist. To determine the contrast, the development process was optimised for the respective needs (longer development time and a lower developer concentration):

Photoresist	Film thickness (μm)	Resolution (μm)	Contrast
AR-P 1250	6	2	2
AR-P 3100	0.6	0.5	4
AR-P 3200	20	5	2
AR-P 3200	50	15	1.6
AR-P 3500 (T)	2	1.2	4.5
AR-P 3740, 3840	1.4	0.4	6
AR-U 4000	1	0.6	3.5
AR-N 4240	1.4	0.8	2.8
AR-N 4340	2	1	5
AR-N 4400	10	1.2	3
AR-N 4400	55	3	2
AR-P 5300	1	0.5	5
AR-P 5400/3510	at least threefold film thickness of the bottom layer AR-P 5400

分享到：